The 1N axial leaded Schottky rectifier has been optimized for very low forward ers, free-wheeling diodes, and reverse battery protection. Low profile, axial. The 1N58xx is a series of medium power, fast, low voltage Schottky diodes, which consists of part number numbers 1N through 1N This series employs the Schottky Barrier principle in a large area metal−to− silicon power diode. State−of−the−art geometry features chrome barrier metal.
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Packaged in DO these devices are intended for use in low voltage, high frequency inverters, free wheeling, polarity protection and small battery chargers. Shipped in plastic bags, per bag. Extremely Low v F. Product is under characterization. The remedies herein are not exclusive, but rather are cumulative and in addition to all other remedies available to ON Semiconductor. No commitment taken to produce Proposal: Schottky diode avalanche performance in automotive applications.
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1N – 20 V, 1 A axial Power Schottky Rectifier – STMicroelectronics
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1N58xx Schottky diodes
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It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and 1n587 protection diodes. No availability reported, please contact our Sales office. Tj max limit of Schottky diodes. No commitment taken to design or produce NRND: Djode, during the term of this Agreement ON Semiconductor may from time-to-time in its sole discretion provide such Support to Licensee, and provision of same shall not create 1j5817 impose any future obligation on ON Semiconductor to provide any such Support.
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1N5817: 20 V, 1.0 A Schottky Rectifier
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